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| SI3499DV New Product Vishay Siliconix P-Channel 1.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.023 @ VGS = -4.5 V -8 0.029 @ VGS = -2.5 V 0.036 @ VGS = -1.8 V 0.048 @ VGS = -1.5 V FEATURES ID (A) -7 -6.2 -5.2 -5.0 28 Qg (Typ) D TrenchFETr Power MOSFET: 1.5-V Rated D Ultra-Low On-Resistance D 100% Rg Tested APPLICATIONS D Load Switch for Portable Devices TSOP-6 Top View 1 3 mm 6 5 (3) G (4) S 2 3 4 (1, 2, 5, 6) D P-Channel MOSFET 2.85 mm Ordering Information: SI3499DV-T1--E3 Marking Code: B3xxx ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State -8 "5 Unit V -7 -3.6 -20 -1.7 2.0 1.0 -55 to 150 -5.3 -3.9 A -0.9 1.1 0.6 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 73138 Pending--Rev. A, 18-Oct-04 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 90 25 Maximum 62.5 110 30 Unit _C/W C/W 1 SI3499DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "5 V VDS = -8 V, VGS = 0 V VDS = -8 V, VGS = 0 V, TJ = 85_C VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -7 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = -2.5 V, ID = -6.2 A VGS = -1.8 V, ID = -5.2 A VGS = -1.5 V, ID = -3 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -5 V, ID = -7 A IS = -1.7 A, VGS = 0 V -20 0.019 0.024 0.028 0.035 28 -0.63 -1.1 0.023 0.029 0.036 0.048 S V W -0.35 -0.75 "100 -1 -10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = -1.7 A, di/dt = 100 A/ms VDD = -4 V, RL = 4 W ID ^ -1 A, VGEN = -4.5 V, Rg = 6 W 4 VDS = -4 V, VGS = -4.5 V, ID = -7 A , , 28 2.9 5.8 8.5 27 65 210 110 40 13 40 100 315 165 70 ns W 42 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 25 I D - Drain Current (A) 20 1.5 V 15 10 5 1V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com 0 0.0 0.4 VGS = 5 thru 2 V 30 25 I D - Drain Current (A) 20 15 10 TC = 125_C 5 25_C -55_C 0.8 1.2 1.6 2.0 Transfer Characteristics VGS - Gate-to-Source Voltage (V) Document Number: 73138 Pending--Rev. A, 18-Oct-04 2 SI3499DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) - On-Resistance ( W ) 3500 3000 C - Capacitance (pF) 0.08 2500 2000 1500 1000 500 0 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 Crss Ciss Vishay Siliconix Capacitance 0.06 VGS = 1.5 V VGS = 1.8 V VGS = 2.5 V 0.02 VGS = 4.5 V 0.00 0.04 Coss ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 6 12 18 24 30 36 Qg - Total Gate Charge (nC) VDS = 4 V ID = 7 A 1.4 rDS(on) - On-Resiistance (Normalized) 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 7 A 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 10 I S - Source Current (A) 0.10 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.08 0.06 ID = 7 A TJ = 150_C 1 TJ = 25_C 0.04 0.02 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 73138 Pending--Rev. A, 18-Oct-04 www.vishay.com 3 SI3499DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 0.1 0.0 -0.1 -0.2 -50 8 Power (W) 24 TA = 25_C 16 40 Single Pulse Power 32 -25 0 25 50 75 100 125 150 0 10-2 10-1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 100 Safe Operating Area *rDS(on) Limited IDM Limited 10 I D - Drain Current (A) 1 mS 10 mS 1 ID(on) Limited 100 mS 1S 10 S dc 0.1 TC = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified 2 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 360_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 73138 Pending--Rev. A, 18-Oct-04 SI3499DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73138. Document Number: 73138 Pending--Rev. A, 18-Oct-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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